Experiment: To study the resistivity of semiconductor by FourProbe Method at different temperatures.
TechnicalSpecifications:
DDRI Four Probe Apparatus Setup consists of:
(1) Constant Current Generator having open circuitvoltage of 18V, Current Range 0-20mA
(2) Oven Power supply
(3) Oven with regulator which is used toheat the crystal from Room temperature to about 200C.
(4) Four Probe Arrangement: Four individuallyspring loaded probes coated with Zinc at the tips to ensure
good electrical contact with the sample crystaland are equally spaced. The whole arrangement is
mounted on a suitable stand and connection leadsare provided for voltage and current measurements..
(5) A Sample of Ge / Si crystal in the form ofChip/Slice
(6) Digital Voltmeter of range(0-200mV and0-2000mV) with selector switch to measure the voltage across
the crystal
(7) Thermometer(250C) to measure the ovenTemperature.
(8) Instructional Lab Manual
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